document number: 81865 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.1, 26-oct-09 1 optocoupler, photodarlington output, high gain, with base connection 4n32, 4n33 vishay semiconductors description the 4n32 and 4n33 are optically coupled isolators with a gallium arsenide infrared led and a solicon photodarlington sensor. switching can be achieved wh ile maintaining a high degree of isolation between drivi ng and load circuits. these optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. features ? very high current transfer ratio, 500 % min. ? high isolation resistance, 10 11 typical ? standard plastic dip package ? compliant to rohs directive to 2002/95/ec and in accordance weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h ? din en 60747-5-5 available with option 1 ? bsi iec60950; iec60065 ?fimko note (1) for additional information on the availa ble options refer to option information. i179005_1 1 2 3 6 5 4 b c e a c nc v de i179005 order information (1) part remarks 4n32 ctr > 500 %, dip-6 4n33 ctr > 500 %, dip-6 4n32-x000 ctr > 500 %, dip-6 4n33-x000 ctr > 500 %, dip-6 4n32-x007 ctr > 500 %, smd-6 (option 7) 4n32-x007 ctr > 500 %, smd-6 (option 9) 4n33-x009 ctr > 500 %, smd-6 (option 7) 4n33-x009 ctr > 500 %, smd-6 (option 9) absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 3v forward current i f 60 ma power dissi pation p diss 100 mw derate linearly from 55 c 1.33 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter base brea kdown voltage bv ebo 8v collector base br eakdown voltage bv cbo 50 v emitter collector breakdown voltage bv eco 5v collector (load) current i c 100 ma power dissi pation p diss 150 mw derate linearly 2mw/c
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 81865 2 rev. 1.1, 26-oct-09 4n32, 4n33 vishay semiconductors optocoupler, photodarlington output, high gain, with base connection notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for e xtended periods of the time ca n adversely affect reliability. (2) refer to reflow profile for soldering conditions for surface mount ed devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). notes (1) t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requirements. typical values are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. (2) indicates jedec registered values. coupler total dissipation p tot 250 mw derate linearly 3.3 mw/c isolation test voltage (between emitter 1 s v iso 5300 v rms leakage path 7 mm min. air path 7 mm min. isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time (2) at 260 c 10 s electrical characteristics (1) parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.25 1.5 v reverse current v r = 3 v i r 0.1 100 a capacitance v r = 0 v c o 25 pf output collector emitter breakdown voltage (2) i c = 100 a, i f = 0 bv ceo 30 v collector base breakdown voltage (2) i c = 100 a, i f = 0 bv cbo 50 v emitter base br eakdown voltage (2) i c = 100 a, i f = 0 bv ebo 8v emitter collector breakdown voltage (2) i c = 100 a, i f = 0 bv eco 510 v collector emitter leakage current v ce = 10 v, i f = 0 i ceo 1 100 na i c = 0.5 ma, v ce = 5 v h fe 13 coupler collector emitter sa turation voltage v cesat 1v coupling capacitance 1.5 pf current transfer ratio parameter test condition symbol min. typ. max. unit current transfer ratio v ce = 10 v, i f = 10 ma ctr 500 % switching characteristics parameter test condition symbol min. typ. max. unit turn-on time v cc = 10 v, i c = 50 ma t on 5s turn-off time i f = 200 ma, r l = 180 t off 100 s absolute maximum ratings (1) parameter test condition symbol value unit
document number: 81865 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.1, 26-oct-09 3 4n32, 4n33 optocoupler, photodarlington output, high gain, with base connection vishay semiconductors note (1) as per iec 60747-5-5, 7.4.3.8.1, this optocoupler is suitable fo r "safe electr ical insulation" only wi thin the safety ratings . compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics t amb = 25 c, unless ot herwise specified fig. 1 - normalized non- saturated and saturated ctr ce vs. led current fig. 2 - normalized non-saturate d and saturated co llector emitter current vs. led current safety and insulation ratings (1) parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 55/100/21 comparative tracking index cti 175 399 v iotm 8000 v v iorm 890 v p so 700 mw i si 400 ma t si 175 c creepage distance standard dip-6 7 mm clearance distance standard dip-6 7 mm creepage distance 400 mil dip-6 8 mm clearance distance 400 mil dip-6 8 mm insulation thickness, reinforced rated per iec 60950 2.10.5.1 0.4 mm i4n32-33_02 0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ce = 5 v i f - led current (ma) nctr ce - normalized ctr ce v ce = 5 v i f = 10 ma t a = 25 c normalized to: v ce = 1 v i4n32-33_03 100 1 0.1 0.001 0.01 0.1 1 10 i f - led current (ma) ni ce - normalized i ce 10 v ce = 5 v i f = 10 ma t a = 25 c normalized to: v ce = 5 v v ce = 1 v
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 81865 4 rev. 1.1, 26-oct-09 4n32, 4n33 vishay semiconductors optocoupler, photodarlington output, high gain, with base connection fig. 3 - normalized collector base photocurrent vs. led current fig. 4 - non-saturated and saturated h fe vs. base current fig. 5 - low to high propagation delay vs. collector load resistance and led current fig. 6 - high to low propagation delay vs. collector load resistance and led current fig. 7 - switching waveform and switching schematic i4n32-33_04 0.1 1 10 100 0.001 0.01 0.1 1 10 i f = led current (ma) ni cb - normalized i cb v cb = 3.5 v i f = 10 ma t a = 25 c normalized to: i4n32-33_05 0.01 0.1 1 10 100 0 2000 4000 6000 8000 10 000 v ce = 5 v v ce = 1 v i b - base current (a) h fe - forward transfer gain t a = 25 c i4n32-33_06 0101520 0 20 40 60 80 t a = 25 c, v cc = 5 v v th = 1.5 v i f - led current (ma) t plh - low/high propagation delay (s) 1 k 5 220 470 100 i4n32-33_07 0101520 0 5 10 15 20 i f - led current (ma) t a = 25 c v cc = 5 v v th = 1.5 v t phl - high/low propagation delay (s) 1 k 100 5 i4n32-33_08 i f t r v o t d t s t f t phl t plh v th = 1.5 v r l v cc i f v o
document number: 81865 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.1, 26-oct-09 5 4n32, 4n33 optocoupler, photodarlington output, high gain, with base connection vishay semiconductors package dimensions in millimeters for 4n32, 4n33.... see dil300-6 package dimension in the package section. for products with an option designator (e.g. 4n32-x007 or 4n33-x009).... see dip-6 package dimensions in the package section. dip-6 package dimensions package marking note example marking for 4n32-x017t. option 6, 9 or t are not indicated in the marking. i178004 0.25 typ. 2.9 3 3.30 3.81 0.8 min. 7.62 typ. 0.8 0.9 2.54 typ. 1 min. 0.45 0.55 0.55 6.3 6.5 8.5 8.7 pin one id 6 5 4 1 2 3 18 3 to 9 7.62 to 8.81 4 typ. iso method a 0.45 8 min. 7.62 typ. 4.6 4.1 8.4 min. 10.3 max. 0.7 option 7 18494 8 min. 0.51 1.02 7.62 ref. 9.53 10.03 0.25 typ. 0.102 0.249 15 max. option 9 21764-18 4n32 -x017 v yww h 68
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